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Jinwoo Cheon, John Arnold, Kin-Man Yu, and Edith D. Bourret*
Metalorganic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor: In [SeC (SiMe3) 3] 3
Chem. Mater., 7(12), 2273-2276
Metalorganic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor: In [SeC (SiMe3) 3] 3
Chem. Mater., 7(12), 2273-2276
Date: Dec 1, 1995
Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In [SeC (SiMe3) s] 3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).
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