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Florian M. Arnold†, Alireza Ghasemifard†, Agnieszka Kuc, and Thomas Heine* († equally contributed)
Implementing Electronic Signatures of Graphene and Hexagonal Boron Nitride in Twisted Bilayer Molybdenum Disulfide
Mater. Today, 73, 96-104
Date: Feb 16, 2024

Angeli and MacDonald reported a superlattice-imposed Dirac band in twisted bilayer molybdenum disulphide (tBL MoS2) for small twist angles towards the RM h (parallel) stacking. Using a hierarchical set of theoretical methods, we show that the superlattices differ for twist angles with respect to metastable RM h (0) and lowest-energy Hh h (60) configurations. When approaching RM h stacking, identical domains with opposite spatial orientation emerge. They form a honeycomb superlattice, yielding Dirac bands and a lateral spin texture distribution with opposite-spin-occupied K and K’ valleys. Small twist angles towards the Hh h configuration (60) generate Hh h and HX h stacking domains of different relative energies and, hence, different spatial extensions. This imposes a symmetry break in the moiré cell, which opens a gap between the two top-valence bands, which become flat already for relatively small moiré cells. The superlattices impose electronic superstructures resembling graphene and hexagonal boron nitride into trivial semiconductor MoS2.

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