The wide band gap II/VI semiconductors are of current interest for optoelectronic applications such as blue lasers, light-emitting diodes, and optical devices based on nonlinear properties.1,2In particular, ternary phase materials (e.g., ZnxCd1-xS) have attracted technological interest because the band gap can be tuned and the lattice parameters can be varied. Chemical vapor deposition (CVD) of II/VI materials from pyrolysis of metal complexes with sulfur-chelating ligands (dithiocarbamate, dithiophosphate) has been reported,3 but photoassisted CVD is rare.